槽宽3mm

ZOS-T9503-01
ZOS-T9503-01 由红外发射二极管和 NPN 硅光晶体管组成,它们并排封装在 黑色热塑性外壳中的汇聚光轴上。光电晶体管只接收来自 IR 的辐射。这是正 常情况。但当物体在中间时,光电晶体管不能接收辐射。有关更多组件信 息,请参阅IR 和 PT。
The ZOS-T9503-01 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing.The phototransistor receives radiation from the IR
only .This is the normal situation. But when an object is in between , phototransistor could not receives the
radiation.For additional component information , please refer to IR and PT.
特性 Feature
--可靠性高、辐射强度高、低电压驱动
High reliability 、High radiant intensity 、Low forward voltage、 --感应速度快、感光度强
Fast response time 、High photo sensitivity --截止感应波长 940nm
Cut-off visible wavelength λp=940nm --无铅材料、Rosh 认证
Pb.Free 、RoHS compliant version
应用 Application
-打印机、非接触开关
Printer 、Non-contact Switching --智能电子产品
Intelligent Electronic Products --工业机械设备
Industrial Intelligent Equipment --安防防护应用
Safety Application Products
产品尺寸 Package Dimension
备注Notes:
--所有尺寸为毫米标识
All dimensions are in millimeters --未标识尺寸正负公差为 0.3mm
Tolerances unless dimensions ±0.3mm
光电特性 Electro-Optical Characteristics
*2 、脉宽少于等于 100us , 占空比 1% Pulse width≦100μs,Duty cycle= 1%
最大额定值 Absolute Maximum Ratings
*1 、 在 25 摄氏度的环境中测试 below 25 Free Air Temperature
*2 、脉宽少于等于 100us , 占空比 1% Pulse width≦100μs,Duty cycle= 1% *3 、离胶体 2mm 以上焊接 5s 内 2mm form body for 5 seconds