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ZOS-T1204-02
ZOS-T1204-02 由红外发射二极管和 NPN 硅光晶体管组成，它们并排封装在黑 色热塑性外壳中的汇聚光轴上。光电晶体管只接收来自 IR 的辐射。这是正常 情况。但当物体在中间时，光电晶体管不能接收辐射。有关更多组件信息， 请参阅 IR 和 PT。
TheZOS-T1204-02consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing.The phototransistor receives radiation from the IR
only .This is the normal situation. But when an object is in between, phototransistor could not receives the radiation.For additional component information , please refer to IR and PT.
特性 Feature
--可靠性高、辐射强度高、低电压驱动
High reliability 、High radiant intensity 、Low forward voltage、
--感应速度快、感光度强
Fast response time 、High photo sensitivity
--截止感应波长 940nm
Cut-off visible wavelength λp=940nm
--无铅材料、Rohs 认证
Pb.Free 、RoHS compliant version
应用 Application
--打印机、非接触开关
Printer 、Non-contact Switching
--智能电子产品
Intelligent Electronic Products
--工业机械设备
Industrial Intelligent Equipment
--安防防护应用
Safety Application Products
产品尺寸 Package Dimension
备注 Notes:
--所有尺寸为毫米标识
All dimensions are in millimeters --未标识尺寸正负公差为 0.3mm
Tolerances unless dimensions ±0.3mm
光电特性 Electro-Optical Characteristics
*2 、脉宽少于等于 100us ， 占空比 1% Pulse width≦100μs,Duty cycle= 1%
最大额定值 Absolute Maximum Ratings
*1 、 在 25 摄氏度的环境中测试 below 25 Free Air Temperature
*2 、脉宽少于等于 100us ， 占空比 1% Pulse width≦100μs,Duty cycle= 1% *3 、离胶体 2mm 以上焊接 5s 内 2mm form body for 5 seconds