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ZOS-T1103-B06
ZOS-T1103-B06由红外发射二极管和NPN硅光晶体管组成，它们并排封装在黑色热塑性外壳中的汇聚光轴上。光电晶体管只接收来自IR的辐射。这是正常情况。但当物体在中间时，光电晶体管不能接收辐射。有关更多组件信息，请参阅IR和PT。
The ZOS-T1103-B06 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing.The phototransistor receives radiation from the IR only .This is the normal situation. But when an object is in between , phototransistor could not receives the radiation.For additional component information , please refer to IR and PT.
特性Feature
--可靠性高、辐射强度高、低电压驱动
High reliability、High radiant intensity、Low forward voltage、
--感应速度快、感光度强
Fast response time、High photo sensitivity
--截止感应波长940nm
Cut-off visible wavelength λp=940nm
--无铅材料、Rosh认证
Pb.Free、RoHS compliant version
应用Application
--打印机、非接触开关
Printer、Non-contact Switching
--智能电子产品
Intelligent Electronic Products
--工业机械设备
Industrial Intelligent Equipment
--安防防护应用
Safety Application Products
产品尺寸Package Dimension
光电特性Electro-Optical Characteristics
*2、脉宽少于等于100us，占空比1% Pulse width≦100μs,Duty cycle= 1%
最大额定值Absolute Maximum Ratings
