槽宽3mm

ZOS-T1003-02
ZOS-T1003-02 由红外发射二极管和 NPN 硅光晶体管组成,它们并排封装在黑色热塑性外壳中的汇聚光轴上。光电晶体管只接收来自 IR 的辐射。这是正常情况。但当物体在中间时,光电晶体管不能接收辐射。有关更多组件信息,请参阅 IR 和 PT。
The ZOS-T1003-02 consist of an infrared emitting diode and an NPN silicon phototransistor, encased side-by-side on converging optical axis in a black thermoplastic housing.The phototransistor receives radiation from the IR only .This is the normal situation. But when an object is in between , phototransistor could not receives the radiation.For additional component information , please refer to IR and PT.
特性 Feature
--可靠性高、辐射强度高、低电压驱动
High reliability 、High radiant intensity 、Low forward voltage、
--感应速度快、感光度强
Fast response time 、High photo sensitivity
--截止感应波长 940nm
Cut-off visible wavelength λp=940nm
--无铅材料、Rosh 认证
Pb.Free 、RoHS compliant version
应用 Application
--打印机、非接触开关
Printer 、Non-contact Switching
--智能电子产品
Intelligent Electronic Products
--工业机械设备
Industrial Intelligent Equipment
--安防防护应用
Safety Application Products
产品尺寸 Package Dimension
备注 Notes:
--所有尺寸为毫米标识
All dimensions are in millimeters
--未标识尺寸正负公差为 0.3mm
Tolerances unless dimensions ±0.3mm
光电特性 Electro-Optical Characteristics
最大额定值 Absolute Maximum Ratings